中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

文献类型:期刊论文

作者Wang Yonggang ; Ma Xiaoyu ; Cao Shiyang ; Zhang Zhigang
刊名半导体学报
出版日期2004
卷号25期号:10页码:1233-1237
中文摘要A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.
英文摘要A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:48导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:48Z (GMT). No. of bitstreams: 1 4664.pdf: 336009 bytes, checksum: 341823f331b1a58942440cea05cc860c (MD5) Previous issue date: 2004; Institute of Semiconductors,The Chinese Academy of Sciences;Ultrafast Laser Laboratory,School of Precision Instrument and Optoelectronics Engineering,University of Tianjin
学科主题半导体器件
收录类别CSCD
语种英语
公开日期2010-11-23 ; 2011-04-29
源URL[http://ir.semi.ac.cn/handle/172111/17295]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Wang Yonggang,Ma Xiaoyu,Cao Shiyang,et al. 800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser[J]. 半导体学报,2004,25(10):1233-1237.
APA Wang Yonggang,Ma Xiaoyu,Cao Shiyang,&Zhang Zhigang.(2004).800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser.半导体学报,25(10),1233-1237.
MLA Wang Yonggang,et al."800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser".半导体学报 25.10(2004):1233-1237.

入库方式: OAI收割

来源:半导体研究所

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