Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides
文献类型：期刊论文
| 作者 | Sun Guosheng ; Zhang Yongxing ; Gao Xin ; Wang Junxi ; Wang Lei ; Zhao Wanshun ; Wang Xiaoliang ; Zeng Yiping ; Li Jinmin |
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:10页码:1205-1210 |
| 中文摘要 | 50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks. |
| 英文摘要 | 50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:48导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:48Z (GMT). No. of bitstreams: 1 4665.pdf: 335412 bytes, checksum: 924f6659f02c2026cc880a7e40622aee (MD5) Previous issue date: 2004; 国家重点基础研究专项基金,国家高技术研究发展计划; Institute of Semiconductors,The Chinese Academy of Sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究专项基金,国家高技术研究发展计划 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17297]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Guosheng,Zhang Yongxing,Gao Xin,et al. Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides[J]. 半导体学报,2004,25(10):1205-1210. |
| APA | Sun Guosheng.,Zhang Yongxing.,Gao Xin.,Wang Junxi.,Wang Lei.,...&Li Jinmin.(2004).Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides.半导体学报,25(10),1205-1210. |
| MLA | Sun Guosheng,et al."Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides".半导体学报 25.10(2004):1205-1210. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。