Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector
文献类型：期刊论文
| 作者 | Cheng Buwen ; Zhao Lei; Zuo Yuhua
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:12页码:1576-1579 |
| 中文摘要 | a sige/si multi-quantum wells resonant-cavity-enhanced(rce) detector with high reflectivity bottom mirror is fabricated by a new method.the bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(epw) solution with the buried sio2 layer in soi substrate as the etching-stop layer.reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.the peak responsivity of the rce detector at 1.344μm is 1.2ma/w and the full width at half maximum is 12nm.compared with the conventional p-i-n photodetector,the responsivity of rce detector is enhanced 8 times. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17323]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cheng Buwen,Zhao Lei,Zuo Yuhua. Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J]. 半导体学报,2004,25(12):1576-1579. |
| APA | Cheng Buwen,Zhao Lei,&Zuo Yuhua.(2004).Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector.半导体学报,25(12),1576-1579. |
| MLA | Cheng Buwen,et al."Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector".半导体学报 25.12(2004):1576-1579. |
入库方式： OAI收割
来源：半导体研究所
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