Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator
文献类型：期刊论文
| 作者 | Chen Shaowu ; Fan Zhongchao
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:12页码:1573-1575 |
| 中文摘要 | a rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based mach-zehnder interferometer(mmi-mzi) switch elements，is designed and fabricated.the minimum and maximum excess loss for the matrix are 6.6 and 10.4db,respectively.the crosstalk in the matrix is measured to be between －12 and －19.8db.the switching speed of the matrix is less than 30μs.the power consumption for the single switch element is about 330mw. |
| 英文摘要 | a rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based mach-zehnder interferometer(mmi-mzi) switch elements，is designed and fabricated.the minimum and maximum excess loss for the matrix are 6.6 and 10.4db,respectively.the crosstalk in the matrix is measured to be between －12 and －19.8db.the switching speed of the matrix is less than 30μs.the power consumption for the single switch element is about 330mw.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:55导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:05:55z (gmt). no. of bitstreams: 1 4679.pdf: 247998 bytes, checksum: a44f7380536e55de8f9adc9a23fae93b (md5) previous issue date: 2004; 国家基础研究重点发展计划,国家高技术研究发展计划,国家自然科学基金; 中科院半导体所 |
| 学科主题 | 光电子学 |
| 资助信息 | 国家基础研究重点发展计划,国家高技术研究发展计划,国家自然科学基金 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17325]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Shaowu,Fan Zhongchao. Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator[J]. 半导体学报,2004,25(12):1573-1575. |
| APA | Chen Shaowu,&Fan Zhongchao.(2004).Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator.半导体学报,25(12),1573-1575. |
| MLA | Chen Shaowu,et al."Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator".半导体学报 25.12(2004):1573-1575. |
入库方式： OAI收割
来源：半导体研究所
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