Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Sun Guosheng ; Gao Xin ; Zhang Yongxing ; Wang Lei ; Zhao Wanshun ; Zeng Yiping ; Li Jinmin |
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:12页码:1549-1554 |
| 中文摘要 | horizontal air-cooled low-pressure hot-wall cvd (lp-hwcvd) system is developed to get highly qualitical 4h-sic epilayers.homoepitaxial growth of 4h-sic on off-oriented si-face (0001) 4h-sic substrates is performed at 1500℃ with a pressure of 1.3×103pa by using the step-controlled epitaxy.the growth rate is controlled to be about 1.0μm/h.the surface morphologies and structural and optical properties of 4h-sic epilayers are characterized with nomarski optical microscope,atomic force microscopy (afm),x-ray diffraction,raman scattering,and low temperature photoluminescence (ltpl).n-type 4h-sic epilayers are obtained by in-situ doping of nh3 with the flow rate ranging from 0.1 to 3sccm.sic p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.the obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17329]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Guosheng,Gao Xin,Zhang Yongxing,et al. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition[J]. 半导体学报,2004,25(12):1549-1554. |
| APA | Sun Guosheng.,Gao Xin.,Zhang Yongxing.,Wang Lei.,Zhao Wanshun.,...&Li Jinmin.(2004).Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition.半导体学报,25(12),1549-1554. |
| MLA | Sun Guosheng,et al."Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition".半导体学报 25.12(2004):1549-1554. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。