Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs
文献类型：期刊论文
| 作者 | Wang Wei; Wang Wei |
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:8页码:898-902 |
| 中文摘要 | a semiconductor optical amplifier gate based on tensile-strained quasi-bulk ingaas is developed. at injection current of 80ma,a 3db optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.moreover, the most important is that very low polarization dependence of gain (＜0. 7db),fiber-to-fiber lossless operation current (70～90ma) and a high extinction ratio (＞50db) are simultaneously obtained over this wide 3db optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole c band (1525～1565nm)and the whole l band (1570～ 1610nm). the gating time is also improved by decreasing carrier lifetime. the wideband polarization-insensitive soa-gate is promising for use in future dense wavelength division multiplexing (dwdm) communication systems. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究发展规划,国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17353]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Wei,Wang Wei. Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs[J]. 半导体学报,2004,25(8):898-902. |
| APA | Wang Wei,&Wang Wei.(2004).Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs.半导体学报,25(8),898-902. |
| MLA | Wang Wei,et al."Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs".半导体学报 25.8(2004):898-902. |
入库方式： OAI收割
来源：半导体研究所
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