1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers
文献类型：期刊论文
| 作者 | Wang Wei ; Zhang Jing; Wang Hui; Wang Hui
|
| 刊名 | 光电子·激光
 |
| 出版日期 | 2004 |
| 卷号 | 15期号:8页码:906-909 |
| 中文摘要 | Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy(LP-MOVPE) and tested.The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature.A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained.In oddition,the side mode suppression ratio (SMSR) is 27.5 dB. |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 资助信息 | Supported by the National Natural Science Foundation of China |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17421]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Wei,Zhang Jing,Wang Hui,et al. 1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers[J]. 光电子·激光,2004,15(8):906-909. |
| APA | Wang Wei,Zhang Jing,Wang Hui,&Wang Hui.(2004).1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers.光电子·激光,15(8),906-909. |
| MLA | Wang Wei,et al."1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers".光电子·激光 15.8(2004):906-909. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。