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Non-stoichiometry Related Deep Level Defects in Semi-insulating InP
文献类型：期刊论文
| 作者 | Zhao Youwen ; Dong Zhiyuan ; Duan Manlong ; Sun Wenrong ; Yang Zixiang ; Lu Xuru ; Wang Yingli |
| 刊名 | 人工晶体学报
 |
| 出版日期 | 2004 |
| 卷号 | 33期号:4页码:535-538 |
| 中文摘要 | semi-insulating (si) inp materials have been prepared under different stoichiometric conditions, including fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. deep level defects related with non-stoichiometry have been detected in the si-inp samples. a close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown fe-doped and annealed undoped si-inp materials. fe-doped si-inp material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4ev. the suppression of the defects by high temperature annealing undoped inp leads to the manufacture of high quality si-inp with high mobility and good electrical uniformity. a technology for the growth of high quality si-inp through stoichiometry control has been proposed based on the results. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17451]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Youwen,Dong Zhiyuan,Duan Manlong,et al. Non-stoichiometry Related Deep Level Defects in Semi-insulating InP[J]. 人工晶体学报,2004,33(4):535-538. |
| APA | Zhao Youwen.,Dong Zhiyuan.,Duan Manlong.,Sun Wenrong.,Yang Zixiang.,...&Wang Yingli.(2004).Non-stoichiometry Related Deep Level Defects in Semi-insulating InP.人工晶体学报,33(4),535-538. |
| MLA | Zhao Youwen,et al."Non-stoichiometry Related Deep Level Defects in Semi-insulating InP".人工晶体学报 33.4(2004):535-538. |
入库方式： OAI收割
来源：半导体研究所
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