High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD
文献类型：期刊论文
| 作者 | Zhang Yongxing ; Sun Guosheng ; Wang Lei ; Zhao Wanshun ; Gao Xin ; Zeng Yiping ; Li Jinmin ; Li Siyuan |
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:9页码:1091-1096 |
| 中文摘要 | the high temperature (300～480k) characteristics of the n-3c-sic/p-si heterojunction diodes (hjd) fabricated by low-pressure chemical vapor deposition on si (100) substrates are investigated.the obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480k of an ambient temperature .220v of reverse breakdown voltage is acquired at 300k.capacitance-voltage characteristics show that the abrupt junction model is applicable to the sic/si hjd structure and the built-in voltage is 0.75v.an ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.the 3c-sic/si hjd represents a promising approach for the fabrication of high quality heterojunction devices such as sic-emitter heterojunction bipolar transistors. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究专项基金,国家高技术研究与发展计划 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17481]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Yongxing,Sun Guosheng,Wang Lei,et al. High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD[J]. 半导体学报,2004,25(9):1091-1096. |
| APA | Zhang Yongxing.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,Gao Xin.,...&Li Siyuan.(2004).High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD.半导体学报,25(9),1091-1096. |
| MLA | Zhang Yongxing,et al."High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD".半导体学报 25.9(2004):1091-1096. |
入库方式： OAI收割
来源：半导体研究所
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