High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching
文献类型：期刊论文
| 作者 | Chen Lianghui ; Hou Shihua
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:9页码:1079-1083 |
| 中文摘要 | high power and high-slope efficiency 650nm band real-refractive-index ridge waveguide algainp laser diodes with compressive strained mqw active layer are formed by pure ar ion beam etching process.symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.the typical threshold current of these devices is 46ma at room temperature,and a stable fundamental-mode operation over 40mw is obtained.very high slope efficiency of 1.4w/a at 10mw and 1.1w/a at 40mw are realized. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17483]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Lianghui,Hou Shihua. High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching[J]. 半导体学报,2004,25(9):1079-1083. |
| APA | Chen Lianghui,&Hou Shihua.(2004).High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching.半导体学报,25(9),1079-1083. |
| MLA | Chen Lianghui,et al."High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching".半导体学报 25.9(2004):1079-1083. |
入库方式： OAI收割
来源：半导体研究所
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