High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
文献类型：期刊论文
| ; | |
| 作者 | Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang |
| 刊名 | journal of physics d: applied physics
 ; Journal of Physics D: Applied Physics
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 48页码:445103 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-02-16 ; 2016-02-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26631]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhi Liu,Juanjuan Wen,Xu Zhang,et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, High hole mobility GeSn on insulator formed by self-organized seeding lateral growth[J]. journal of physics d: applied physics, Journal of Physics D: Applied Physics,2015, 2015,48, 48:445103, 445103. |
| APA | Zhi Liu.,Juanjuan Wen.,Xu Zhang.,Chuanbo Li.,Chunlai Xue.,...&Qiming Wang.(2015).High hole mobility GeSn on insulator formed by self-organized seeding lateral growth.journal of physics d: applied physics,48,445103. |
| MLA | Zhi Liu,et al."High hole mobility GeSn on insulator formed by self-organized seeding lateral growth".journal of physics d: applied physics 48(2015):445103. |
入库方式： OAI收割
来源：半导体研究所
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