Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier
文献类型：期刊论文
| 作者 | WangWei; WangWei |
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:1页码:11-17 |
| 中文摘要 | The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density. |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17691]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | WangWei,WangWei. Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier[J]. 半导体学报,2003,24(1):11-17. |
| APA | WangWei,&WangWei.(2003).Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier.半导体学报,24(1),11-17. |
| MLA | WangWei,et al."Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier".半导体学报 24.1(2003):11-17. |
入库方式： OAI收割
来源：半导体研究所
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