Single Layer Growth of Strained Epitaxy at Low Temperature
文献类型：期刊论文
| 作者 | Duan Ruifei ; Duan Ruifei
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:4页码:362-365 |
| 中文摘要 | contacting mode atomic force microscopy (afm) is used to measure the in0.asgao.65as/gaas epilayer grown at low temperature (460°c). unlike the normal layer-by-layer growth (fvdm mode) or self-organized islands growth (sk mode) ,samples grown under 460 c are found to be large islands with atomic thick terraces. afm measurements reveale near one monolayer high steps. this kind of growth is good between fvdm and sk growth modes and can be used to understand the evolution of strained epitaxy from fvdm to sk mode. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17719]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan Ruifei,Duan Ruifei. Single Layer Growth of Strained Epitaxy at Low Temperature[J]. 半导体学报,2003,24(4):362-365. |
| APA | Duan Ruifei,&Duan Ruifei.(2003).Single Layer Growth of Strained Epitaxy at Low Temperature.半导体学报,24(4),362-365. |
| MLA | Duan Ruifei,et al."Single Layer Growth of Strained Epitaxy at Low Temperature".半导体学报 24.4(2003):362-365. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。