Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots
文献类型：期刊论文
| 作者 | Niu Zhichuan
|
| 刊名 | Semiconductor Photonics and Technology
 |
| 出版日期 | 2003 |
| 卷号 | 9期号:1页码:30-33 |
| 中文摘要 | Self-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 资助信息 | National Natural Science Foundation of China(6 176 6),Projects of Nano-science Technology of Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17741]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu Zhichuan. Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots[J]. Semiconductor Photonics and Technology,2003,9(1):30-33. |
| APA | Niu Zhichuan.(2003).Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots.Semiconductor Photonics and Technology,9(1),30-33. |
| MLA | Niu Zhichuan."Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots".Semiconductor Photonics and Technology 9.1(2003):30-33. |
入库方式： OAI收割
来源：半导体研究所
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