Optimization of InGaAs Quantum Dots for Optoelectronic Applications
文献类型：期刊论文
| 作者 | Duan Ruifei ; Duan Ruifei
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:10页码:1009-1015 |
| 中文摘要 | self-assembled in_0.35ga_0.65as/gaas quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(afm). in order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for mbe growth. optimized growth condi-tions also compared with these of inas/gaas quantum dots. this will be very useful for ingaas/gaas qds opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors. |
| 英文摘要 | self-assembled in_0.35ga_0.65as/gaas quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(afm). in order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for mbe growth. optimized growth condi-tions also compared with these of inas/gaas quantum dots. this will be very useful for ingaas/gaas qds opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:07:24导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:07:24z (gmt). no. of bitstreams: 1 4941.pdf: 599824 bytes, checksum: 9ad171c632b7e283c10d7a29151976e7 (md5) previous issue date: 2003; novel materials department, institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17789]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan Ruifei,Duan Ruifei. Optimization of InGaAs Quantum Dots for Optoelectronic Applications[J]. 半导体学报,2003,24(10):1009-1015. |
| APA | Duan Ruifei,&Duan Ruifei.(2003).Optimization of InGaAs Quantum Dots for Optoelectronic Applications.半导体学报,24(10),1009-1015. |
| MLA | Duan Ruifei,et al."Optimization of InGaAs Quantum Dots for Optoelectronic Applications".半导体学报 24.10(2003):1009-1015. |
入库方式： OAI收割
来源：半导体研究所
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