Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers
文献类型：期刊论文
| 作者 | Yu Lijuan
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:8页码:789-793 |
| 中文摘要 | a fitting process is used to measure the cavity loss and the quasi-fermi-level separation for fabry- perot semiconductor lasers. from the amplified spontaneous emission (ase) spectrum, the gain spectrum and single-pass ase obtained by the cassidy method are applied in the fitting process. for a 1550nm quantum well ingaasp ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained. |
| 英文摘要 | a fitting process is used to measure the cavity loss and the quasi-fermi-level separation for fabry- perot semiconductor lasers. from the amplified spontaneous emission (ase) spectrum, the gain spectrum and single-pass ase obtained by the cassidy method are applied in the fitting process. for a 1550nm quantum well ingaasp ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:07:29导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:07:29z (gmt). no. of bitstreams: 1 4956.pdf: 366621 bytes, checksum: a2aecb0295dbb18b36db8e9b5951421c (md5) previous issue date: 2003; 国家重点基础研究发展规划资助项目（no. g2 366 5）; school of physics science and technology, lanzhou university;institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 光电子学 |
| 资助信息 | 国家重点基础研究发展规划资助项目（no. g2 366 5） |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17819]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu Lijuan. Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers[J]. 半导体学报,2003,24(8):789-793. |
| APA | Yu Lijuan.(2003).Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers.半导体学报,24(8),789-793. |
| MLA | Yu Lijuan."Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers".半导体学报 24.8(2003):789-793. |
入库方式： OAI收割
来源：半导体研究所
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