Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)
文献类型：期刊论文
| 作者 | Sun Guosheng ; Sun Yanling ; Wang Lei ; Zhao Wanshun ; Luo Muchang ; Zhang Yongxing ; Zeng Yiping ; Li Jinmin ; Lin Lanying |
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:6页码:567-573 |
| 中文摘要 | highly oriented voids-free 3c-sic heteroepitaxial layers are grown on φ50mm si (100) substrates by low pressure chemical vapor deposition (lpcvd). the initial stage of carbonization and the surface morphology of carbonization layers of si(100) are studied using reflection high energy electron diffraction (rheed) and scanning electron microscopy (sem). it is shown that the optimized carbonization temperature for the growth of voids-free 3s-sic on si (100) substrates is 1100 ℃. the electrical properties of sic layers are characterized using van der pauw method. the i-v, c-v, and the temperature dependence of i-v characteristics in n-3c-sic-p-si heterojunctions with augeni and al electrical pads are investigated. it is shown that the maximum reverse breakdown voltage of the n-3c-sic-p-si heterojunction diodes reaches to 220v at room temperature. these results indicate that the sic/si heterojunction diode can be used to fabricate the wide bandgap emitter sic/si heterojunction bipolar transistors (hbt's). |
| 英文摘要 | highly oriented voids-free 3c-sic heteroepitaxial layers are grown on φ50mm si (100) substrates by low pressure chemical vapor deposition (lpcvd). the initial stage of carbonization and the surface morphology of carbonization layers of si(100) are studied using reflection high energy electron diffraction (rheed) and scanning electron microscopy (sem). it is shown that the optimized carbonization temperature for the growth of voids-free 3s-sic on si (100) substrates is 1100 ℃. the electrical properties of sic layers are characterized using van der pauw method. the i-v, c-v, and the temperature dependence of i-v characteristics in n-3c-sic-p-si heterojunctions with augeni and al electrical pads are investigated. it is shown that the maximum reverse breakdown voltage of the n-3c-sic-p-si heterojunction diodes reaches to 220v at room temperature. these results indicate that the sic/si heterojunction diode can be used to fabricate the wide bandgap emitter sic/si heterojunction bipolar transistors (hbt's).; 于2010-11-23批量导入; zhangdi于2010-11-23 13:07:35导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:07:35z (gmt). no. of bitstreams: 1 4977.pdf: 280197 bytes, checksum: cb23c5bf659bda1b7905de638df01ee1 (md5) previous issue date: 2003; 国家重点基础研究发展规划(no.g2 683),国家高技术研究发展计划(no.2 1aa311 9 )资助项目; institute of semiconductors, the chineses academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究发展规划(no.g2 683),国家高技术研究发展计划(no.2 1aa311 9 )资助项目 |
| 语种 | 中文 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17861]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Guosheng,Sun Yanling,Wang Lei,et al. Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)[J]. 半导体学报,2003,24(6):567-573. |
| APA | Sun Guosheng.,Sun Yanling.,Wang Lei.,Zhao Wanshun.,Luo Muchang.,...&Lin Lanying.(2003).Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100).半导体学报,24(6),567-573. |
| MLA | Sun Guosheng,et al."Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)".半导体学报 24.6(2003):567-573. |
入库方式： OAI收割
来源：半导体研究所
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