Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD
文献类型：期刊论文
| 作者 | Sun Guosheng ; Luo Muchang ; Wang Lei ; Zhao Wanshun ; Sun Yanling ; Zeng Yiping ; Li Jinmin |
| 刊名 | 发光学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:4页码:421-425 |
| 中文摘要 | the raman measurements have been performed with the back-scattering geometry on the sic films grown on si(100) and sapphire (0001) by lpcvd. typical to and lo phonon peaks of 3c-sic were observed for all the samples grown on si and apphire substrates, indicating the epilayers are 3c-sic polytype. using a free-standing 3c-sic film removed from si(100) as a free-stress sample, the stresses of 3c-sic on si(100) and sapphire (0001) were estimated according to the shift of to and lo phonons. |
| 英文摘要 | the raman measurements have been performed with the back-scattering geometry on the sic films grown on si(100) and sapphire (0001) by lpcvd. typical to and lo phonon peaks of 3c-sic were observed for all the samples grown on si and apphire substrates, indicating the epilayers are 3c-sic polytype. using a free-standing 3c-sic film removed from si(100) as a free-stress sample, the stresses of 3c-sic on si(100) and sapphire (0001) were estimated according to the shift of to and lo phonons.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:07:36导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:07:36z (gmt). no. of bitstreams: 1 4981.pdf: 293048 bytes, checksum: 4d69ce44e9ebc8a71e3843ee005c0b6b (md5) previous issue date: 2003; special funds for major state basic research project (g2 683),national high technology (863) research,development program of china (2 1aa311 9 ); novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | special funds for major state basic research project (g2 683),national high technology (863) research,development program of china (2 1aa311 9 ) |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17869]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Guosheng,Luo Muchang,Wang Lei,et al. Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD[J]. 发光学报,2003,24(4):421-425. |
| APA | Sun Guosheng.,Luo Muchang.,Wang Lei.,Zhao Wanshun.,Sun Yanling.,...&Li Jinmin.(2003).Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD.发光学报,24(4),421-425. |
| MLA | Sun Guosheng,et al."Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD".发光学报 24.4(2003):421-425. |
入库方式： OAI收割
来源：半导体研究所
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