Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback
文献类型：期刊论文
| ; | |
| 作者 | Xurui Mao; Beiju Huang; Hongmei Chen; Chuantong Cheng; Sheng Gan; Zhaoxin Geng; Hongda Chen |
| 刊名 | ieee electron device letters
 ; IEEE Electron Device Letters
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 36期号:10 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-03-22 ; 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26660]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Xurui Mao,Beiju Huang,Hongmei Chen,et al. Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback, Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback[J]. ieee electron device letters, IEEE Electron Device Letters,2015, 2015,36, 36(10). |
| APA | Xurui Mao.,Beiju Huang.,Hongmei Chen.,Chuantong Cheng.,Sheng Gan.,...&Hongda Chen.(2015).Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback.ieee electron device letters,36(10). |
| MLA | Xurui Mao,et al."Graphene Field-Effect Transistor Current Source With Double Top-Gates and Double Feedback".ieee electron device letters 36.10(2015). |
入库方式： OAI收割
来源：半导体研究所
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