Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
文献类型：期刊论文
| ; | |
| 作者 | Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han |
| 刊名 | international journal of thermophysics
 ; International Journal of Thermophysics
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 36页码:980–986 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2016-03-22 ; 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26673]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yan Liu,Jing Yan,Hongjuan Wang,et al. Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility, Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility[J]. international journal of thermophysics, International Journal of Thermophysics,2015, 2015,36, 36:980–986, 980–986. |
| APA | Yan Liu,Jing Yan,Hongjuan Wang,Buwen Cheng,&Genquan Han.(2015).Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility.international journal of thermophysics,36,980–986. |
| MLA | Yan Liu,et al."Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility".international journal of thermophysics 36(2015):980–986. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。