Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
文献类型：期刊论文
| ; | |
| 作者 | Genquan Han; Yibo Wang; Yan Liu; Hongjuan Wang; Mingshan Liu; Chunfu Zhang; Jincheng Zhang; Buwen Cheng; Yue Hao |
| 刊名 | aip advances
 ; AIP ADVANCES
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 5页码:057145 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-03-22 ; 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26676]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Genquan Han,Yibo Wang,Yan Liu,et al. Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain, Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain[J]. aip advances, AIP ADVANCES,2015, 2015,5, 5:057145, 057145. |
| APA | Genquan Han.,Yibo Wang.,Yan Liu.,Hongjuan Wang.,Mingshan Liu.,...&Yue Hao.(2015).Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain.aip advances,5,057145. |
| MLA | Genquan Han,et al."Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain".aip advances 5(2015):057145. |
入库方式： OAI收割
来源：半导体研究所
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