Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer
文献类型：期刊论文
| 作者 | Ning Jin
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:5页码:449-453 |
| 中文摘要 | a new technique to fabricate silicon condenser microphone is presented. the technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p~+-doping silicon of approximately 15μm thickness for the stiff backplate. the measured sensitivity of the microphone fabricated with this technique is in the range from -45db (5.6mv/pa) to -55db (1.78mv/pa) under the frequency from 500hz to 10khz, and shows a gradual increase at high frequency. the cut-off frequency is above 20khz. |
| 学科主题 | 微电子学 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17883]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ning Jin. Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer[J]. 半导体学报,2003,24(5):449-453. |
| APA | Ning Jin.(2003).Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer.半导体学报,24(5),449-453. |
| MLA | Ning Jin."Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer".半导体学报 24.5(2003):449-453. |
入库方式： OAI收割
来源：半导体研究所
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