Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth
文献类型：期刊论文
| ; | |
| 作者 | Zhi Liu; Juanjuan Wen; Tianwei Zhou; Chunlai Xue; Yuhua Zuo; Chuanbo Li; Buwen Cheng; Qiming Wang |
| 刊名 | thin solid films
 ; Thin Solid Films
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 597页码:39–43 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-03-22 ; 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26701]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhi Liu,Juanjuan Wen,Tianwei Zhou,et al. Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth[J]. thin solid films, Thin Solid Films,2015, 2015,597, 597:39–43, 39–43. |
| APA | Zhi Liu.,Juanjuan Wen.,Tianwei Zhou.,Chunlai Xue.,Yuhua Zuo.,...&Qiming Wang.(2015).Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth.thin solid films,597,39–43. |
| MLA | Zhi Liu,et al."Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth".thin solid films 597(2015):39–43. |
入库方式： OAI收割
来源：半导体研究所
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