The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes
文献类型：期刊论文
| 作者 | P. Chen ; D.G. Zhao ; D.S. Jiang ; J.J. Zhu ; Z.S. Liu ; L.C. Le ; J. Yang ; X. Li ; L. Q. Zhang ; J.P. Liu ; S.M. Zhang ; H. Yang |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2015 |
| 卷号 | 212期号:12页码:2936–2943 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26735]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | P. Chen,D.G. Zhao,D.S. Jiang,et al. The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes[J]. physica status solidi a-applications and materials science,2015,212(12):2936–2943. |
| APA | P. Chen.,D.G. Zhao.,D.S. Jiang.,J.J. Zhu.,Z.S. Liu.,...&H. Yang.(2015).The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes.physica status solidi a-applications and materials science,212(12),2936–2943. |
| MLA | P. Chen,et al."The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes".physica status solidi a-applications and materials science 212.12(2015):2936–2943. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。