Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates
文献类型：期刊论文
| 作者 | XiaoyeWang ; WennaDu ; XiaoguangYang ; XingwangZhang ; TaoYang |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2015 |
| 卷号 | 426页码:287–292 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26724]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | XiaoyeWang,WennaDu,XiaoguangYang,et al. Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates[J]. journal of crystal growth,2015,426:287–292. |
| APA | XiaoyeWang,WennaDu,XiaoguangYang,XingwangZhang,&TaoYang.(2015).Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates.journal of crystal growth,426,287–292. |
| MLA | XiaoyeWang,et al."Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates".journal of crystal growth 426(2015):287–292. |
入库方式： OAI收割
来源：半导体研究所
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