Study on the response of InAs nanowire transistors to H2O and NO2
文献类型：期刊论文
| 作者 | Xintong Zhang ; Mengqi Fu ; Xing Li ; Tuanwei Shi ; Zhiyuan Ning ; Xiaoye Wang |
| 刊名 | sensors and actuators b-chemical volume
 |
| 出版日期 | 2015 |
| 卷号 | 209页码:456–461 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26728]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xintong Zhang,Mengqi Fu,Xing Li,et al. Study on the response of InAs nanowire transistors to H2O and NO2[J]. sensors and actuators b-chemical volume,2015,209:456–461. |
| APA | Xintong Zhang,Mengqi Fu,Xing Li,Tuanwei Shi,Zhiyuan Ning,&Xiaoye Wang.(2015).Study on the response of InAs nanowire transistors to H2O and NO2.sensors and actuators b-chemical volume,209,456–461. |
| MLA | Xintong Zhang,et al."Study on the response of InAs nanowire transistors to H2O and NO2".sensors and actuators b-chemical volume 209(2015):456–461. |
入库方式： OAI收割
来源：半导体研究所
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