Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO
文献类型：期刊论文
| 作者 | Juehan Yang ; Nengjie Huo ; Yan Li ; Xiang-Wei Jiang ; Tao Li2 ; Renxiong Li ; Fangyuan Lu ; Chao Fan ; Bo Li ; Kasper Nørgaard2 ; Bo W. Laursen ; Zhongming Wei ; Jingbo Li ; Shu-Shen Li |
| 刊名 | advanced electronic materials
 |
| 出版日期 | 2015 |
| 卷号 | 1期号:10页码:1500267 |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26894]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Juehan Yang,Nengjie Huo,Yan Li,et al. Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO[J]. advanced electronic materials,2015,1(10):1500267. |
| APA | Juehan Yang.,Nengjie Huo.,Yan Li.,Xiang-Wei Jiang.,Tao Li2.,...&Shu-Shen Li.(2015).Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO.advanced electronic materials,1(10),1500267. |
| MLA | Juehan Yang,et al."Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO".advanced electronic materials 1.10(2015):1500267. |
入库方式： OAI收割
来源：半导体研究所
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