The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
文献类型：期刊论文
| 作者 | W. Liu ; D.G. Zhao ; D.S. Jiang ; P. Chen ; Z.S. Liu ; J.J. Zhu ; X. Li ; F. Liang ; J.P. Liu ; S.M. Zhang ; H. Yang ; Y.T. Zhang ; G.T. Du |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2015 |
| 卷号 | 88页码:50-55 |
| 学科主题 | 光电子学 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26746]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | W. Liu,D.G. Zhao,D.S. Jiang,et al. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters[J]. superlattices and microstructures,2015,88:50-55. |
| APA | W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&G.T. Du.(2015).The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters.superlattices and microstructures,88,50-55. |
| MLA | W. Liu,et al."The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters".superlattices and microstructures 88(2015):50-55. |
入库方式： OAI收割
来源：半导体研究所
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