Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness
文献类型：期刊论文
| 作者 | W. Liu ; D.G. Zhao ; D.S. Jiang ; P. Chen ; Z.S. Liu ; J.J. Zhu ; M. Shi ; D.M. Zhao ; X. Li ; J.P. Liu ; S.M. Zhang ; H. Wang ; H. Yang |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2015 |
| 卷号 | 625页码:266–270 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26753]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | W. Liu,D.G. Zhao,D.S. Jiang,et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness[J]. journal of alloys and compounds,2015,625:266–270. |
| APA | W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness.journal of alloys and compounds,625,266–270. |
| MLA | W. Liu,et al."Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness".journal of alloys and compounds 625(2015):266–270. |
入库方式： OAI收割
来源：半导体研究所
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