A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold
文献类型：期刊论文
| 作者 | X. Li ; D.G. Zhao ; D.S. Jiang ; P. Chen ; Z.S. Liu ; M. Shi ; D.M. Zhao ; W. Liu ; J.J. Zhu ; S.M. Zhang ; H. Yang |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2015 |
| 卷号 | 80期号:2015页码:111–117 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26759]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | X. Li,D.G. Zhao,D.S. Jiang,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold[J]. superlattices and microstructures,2015,80(2015):111–117. |
| APA | X. Li.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&H. Yang.(2015).A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold.superlattices and microstructures,80(2015),111–117. |
| MLA | X. Li,et al."A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold".superlattices and microstructures 80.2015(2015):111–117. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。