Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector
文献类型：期刊论文
| 作者 | Jianliang Huang ; Wenquan Ma ; Yanhua Zhang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Shulong Lu |
| 刊名 | applied physics letters
 |
| 出版日期 | 2015 |
| 卷号 | 106期号:26页码:1-5 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26788]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jianliang Huang,Wenquan Ma,Yanhua Zhang,et al. Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector[J]. applied physics letters,2015,106(26):1-5. |
| APA | Jianliang Huang.,Wenquan Ma.,Yanhua Zhang.,Yulian Cao.,Ke Liu.,...&Shulong Lu.(2015).Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector.applied physics letters,106(26),1-5. |
| MLA | Jianliang Huang,et al."Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector".applied physics letters 106.26(2015):1-5. |
入库方式： OAI收割
来源：半导体研究所
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