中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

文献类型:期刊论文

作者DaiBing Zhou ; HuiTao Wang ; RuiKang Zhang ; BaoJun Wang ; Jing Bian ; Xin An ; Dan Lu ; LingJuan Zhao ; HongLiang Zhu ; Chen Ji ; Wei Wang
刊名chinese physics letters
出版日期2015
卷号32期号:5页码:54205-54207
学科主题半导体材料
收录类别SCI
语种英语
公开日期2016-03-23
源URL[http://ir.semi.ac.cn/handle/172111/26796]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
DaiBing Zhou,HuiTao Wang,RuiKang Zhang,et al. Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology[J]. chinese physics letters,2015,32(5):54205-54207.
APA DaiBing Zhou.,HuiTao Wang.,RuiKang Zhang.,BaoJun Wang.,Jing Bian.,...&Wei Wang.(2015).Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology.chinese physics letters,32(5),54205-54207.
MLA DaiBing Zhou,et al."Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology".chinese physics letters 32.5(2015):54205-54207.

入库方式: OAI收割

来源:半导体研究所

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