High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD
文献类型：期刊论文
| 作者 | XiangTing Kong ; XuLiang Zhou ; ShiYan Li ; LiJun Qiao ; HongGang Liu ; Wei Wang ; JiaoQing Pan |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2015 |
| 卷号 | 32期号:3页码:37301-37303 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26814]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | XiangTing Kong,XuLiang Zhou,ShiYan Li,et al. High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD[J]. chinese physics letters,2015,32(3):37301-37303. |
| APA | XiangTing Kong.,XuLiang Zhou.,ShiYan Li.,LiJun Qiao.,HongGang Liu.,...&JiaoQing Pan.(2015).High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD.chinese physics letters,32(3),37301-37303. |
| MLA | XiangTing Kong,et al."High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD".chinese physics letters 32.3(2015):37301-37303. |
入库方式： OAI收割
来源：半导体研究所
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