Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
文献类型：期刊论文
| 作者 | Junhua Meng ; Xingwang Zhang ; Haolin Wang ; Xibiao Ren ; Chuanhong Jin ; Zhigang Yin ; Xin Liu ; Heng Liu |
| 刊名 | nanoscale
 |
| 出版日期 | 2015 |
| 卷号 | 7期号:38页码:16046-16053 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26801]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Junhua Meng,Xingwang Zhang,Haolin Wang,et al. Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition[J]. nanoscale,2015,7(38):16046-16053. |
| APA | Junhua Meng.,Xingwang Zhang.,Haolin Wang.,Xibiao Ren.,Chuanhong Jin.,...&Heng Liu.(2015).Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition.nanoscale,7(38),16046-16053. |
| MLA | Junhua Meng,et al."Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition".nanoscale 7.38(2015):16046-16053. |
入库方式： OAI收割
来源：半导体研究所
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