中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

文献类型:期刊论文

作者Xingfang Liu ; Yu Chen ; Changzheng Sun ; Min Guan ; Yang Zhang ; Feng Zhang ; Guosheng Sun ; Yiping Zeng
刊名nanomaterials
出版日期2015
卷号5期号:3页码:1532-1543
学科主题半导体材料
收录类别SCI
语种英语
公开日期2016-03-29
源URL[http://ir.semi.ac.cn/handle/172111/26849]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Xingfang Liu,Yu Chen,Changzheng Sun,et al. Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth[J]. nanomaterials,2015,5(3):1532-1543.
APA Xingfang Liu.,Yu Chen.,Changzheng Sun.,Min Guan.,Yang Zhang.,...&Yiping Zeng.(2015).Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth.nanomaterials,5(3),1532-1543.
MLA Xingfang Liu,et al."Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth".nanomaterials 5.3(2015):1532-1543.

入库方式: OAI收割

来源:半导体研究所

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