Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Linen Zhang ; Chao Liu ; Qiumin Yang ; Lijie Cui ; Yiping Zeng |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2015 |
| 卷号 | 29页码:351-356 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26850]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Linen Zhang,Chao Liu,Qiumin Yang,et al. Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy[J]. materials science in semiconductor processing,2015,29:351-356. |
| APA | Linen Zhang,Chao Liu,Qiumin Yang,Lijie Cui,&Yiping Zeng.(2015).Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy.materials science in semiconductor processing,29,351-356. |
| MLA | Linen Zhang,et al."Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy".materials science in semiconductor processing 29(2015):351-356. |
入库方式： OAI收割
来源：半导体研究所
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