Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition
文献类型：期刊论文
| 作者 | Yujue Yang ; Yiping Zeng |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2015 |
| 卷号 | 212期号:8页码:1805-1809 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26852]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yujue Yang,Yiping Zeng. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition[J]. physica status solidi a-applications and materials science,2015,212(8):1805-1809. |
| APA | Yujue Yang,&Yiping Zeng.(2015).Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition.physica status solidi a-applications and materials science,212(8),1805-1809. |
| MLA | Yujue Yang,et al."Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition".physica status solidi a-applications and materials science 212.8(2015):1805-1809. |
入库方式： OAI收割
来源：半导体研究所
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