Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Shuxian Cai ; Zhonghua Liu ; Ni Zhong ; Shengbei Liu ; Xingfang Liu |
| 刊名 | materials
 |
| 出版日期 | 2015 |
| 卷号 | 8期号:9页码:5586-5596 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26853]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Shuxian Cai,Zhonghua Liu,Ni Zhong,et al. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition[J]. materials,2015,8(9):5586-5596. |
| APA | Shuxian Cai,Zhonghua Liu,Ni Zhong,Shengbei Liu,&Xingfang Liu.(2015).Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition.materials,8(9),5586-5596. |
| MLA | Shuxian Cai,et al."Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition".materials 8.9(2015):5586-5596. |
入库方式： OAI收割
来源：半导体研究所
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