中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology

文献类型:期刊论文

作者Wang SQ ; Zhou CH(周常河) ; Ru HY ; Zhang YY
刊名appl. optics
出版日期2005
卷号44期号:21页码:4429
关键词SURFACE-RELIEF GRATINGS MICROLENSES FABRICATION SIO2 LENS AR
ISSN号0003-6935
中文摘要polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (icp) technology, and it usually prevents further etching. we report an optimized etching condition under which no polymer deposition will occur for etching fused silica with icp technology. under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well. (c) 2005 optical society of america.
收录类别EI
语种英语
WOS记录号WOS:000230665200001
公开日期2009-09-18
源URL[http://ir.siom.ac.cn/handle/181231/1672]  
专题上海光学精密机械研究所_信息光学开放实验室
推荐引用方式
GB/T 7714
Wang SQ,Zhou CH,Ru HY,et al. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology[J]. appl. optics,2005,44(21):4429, 4434.
APA Wang SQ,周常河,Ru HY,&Zhang YY.(2005).Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.appl. optics,44(21),4429.
MLA Wang SQ,et al."Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology".appl. optics 44.21(2005):4429.

入库方式: OAI收割

来源:上海光学精密机械研究所

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