中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz

文献类型:期刊论文

作者Xi Ning ; Shuming Chen ; Jinying Zhang ; Hui Huang ; Lei Wang
刊名applied physics letters
出版日期2015
卷号107页码:052905
学科主题微电子学
收录类别SCI
公开日期2016-04-08
源URL[http://ir.semi.ac.cn/handle/172111/26983]  
专题半导体研究所_半导体集成技术工程研究中心
推荐引用方式
GB/T 7714
Xi Ning,Shuming Chen,Jinying Zhang,et al. Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz[J]. applied physics letters,2015,107:052905.
APA Xi Ning,Shuming Chen,Jinying Zhang,Hui Huang,&Lei Wang.(2015).Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz.applied physics letters,107,052905.
MLA Xi Ning,et al."Dielectric microwave properties of Si-integrated pulsed laser deposited (Ba, Sr)TiO3 thin films up to 110 GHz".applied physics letters 107(2015):052905.

入库方式: OAI收割

来源:半导体研究所

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