Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors
文献类型：期刊论文
| 作者 | Yang Xiaohong
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:11页码:1135-1139 |
| 中文摘要 | both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. their characteristics are analyzed. the light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mw while injection current is 50ma. a 1*16 array of surface emitting light device is tested on line by probes and then used for module. the light detectors have wavelength selectivity and space selectivity. the required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top dbr period by etching. |
| 英文摘要 | both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. their characteristics are analyzed. the light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mw while injection current is 50ma. a 1*16 array of surface emitting light device is tested on line by probes and then used for module. the light detectors have wavelength selectivity and space selectivity. the required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top dbr period by etching.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:07:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:07:56z (gmt). no. of bitstreams: 1 5044.pdf: 220179 bytes, checksum: 9a310369421d9a9d69733ddfd22aab9a (md5) previous issue date: 2002; 国家自然科学基金（批准号：6 137 2 ）,国家自然科学基金（批准号：6989626 ）,国家自然科学基金（批准号：69776 36）,国家863计划（nos.2 1aa122 32）,国家863计划（nos.2 1aa312 8 ）; institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金（批准号：6 137 2 ）,国家自然科学基金（批准号：6989626 ）,国家自然科学基金（批准号：69776 36）,国家863计划（nos.2 1aa122 32）,国家863计划（nos.2 1aa312 8 ） |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17995]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang Xiaohong. Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors[J]. 半导体学报,2002,23(11):1135-1139. |
| APA | Yang Xiaohong.(2002).Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors.半导体学报,23(11),1135-1139. |
| MLA | Yang Xiaohong."Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors".半导体学报 23.11(2002):1135-1139. |
入库方式： OAI收割
来源：半导体研究所
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