Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching
文献类型：期刊论文
| ; | |
| 作者 | Chong Geng; Qingfeng Yan; Peng Dong; Liang Shan; Chengxiao Du; Tongbo Wei; Zhibiao Hao |
| 刊名 | journal of vacuum science & technology b
 ; Journal of Vacuum Science & Technology B
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 33页码:032402 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-04-15 ; 2016-04-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27005]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Chong Geng,Qingfeng Yan,Peng Dong,et al. Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching, Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching[J]. journal of vacuum science & technology b, Journal of Vacuum Science & Technology B,2015, 2015,33, 33:032402, 032402. |
| APA | Chong Geng.,Qingfeng Yan.,Peng Dong.,Liang Shan.,Chengxiao Du.,...&Zhibiao Hao.(2015).Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching.journal of vacuum science & technology b,33,032402. |
| MLA | Chong Geng,et al."Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching".journal of vacuum science & technology b 33(2015):032402. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。