Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser
文献类型：期刊论文
| ; | |
| 作者 | Yingdong Tian; Jianchang Yan; Yun Zhang; Xiang Chen; Yanan Guo; Peipei Cong; Lili Sun; Qinjin Wang; Enqing Guo; Xuecheng Wei |
| 刊名 | optics express
 ; Optics Express
|
| 出版日期 | 2015 ; 2015 |
| 卷号 | 23期号:9页码:11334-11340 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2016-04-15 ; 2016-04-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27008]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Yingdong Tian,Jianchang Yan,Yun Zhang,et al. Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser, Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser[J]. optics express, Optics Express,2015, 2015,23, 23(9):11334-11340, 11334-11340. |
| APA | Yingdong Tian.,Jianchang Yan.,Yun Zhang.,Xiang Chen.,Yanan Guo.,...&Jinmin Li.(2015).Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser.optics express,23(9),11334-11340. |
| MLA | Yingdong Tian,et al."Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser".optics express 23.9(2015):11334-11340. |
入库方式： OAI收割
来源：半导体研究所
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