Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer
文献类型：期刊论文
| 作者 | Peng Ren ; Ning Zhang ; Zhe Liu ; Bin Xue ; Jinmin Li ; Junxi Wang |
| 刊名 | journal of physics d: applied physics
 |
| 出版日期 | 2015 |
| 卷号 | 48期号:4页码:1 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-04-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/27024]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Peng Ren,Ning Zhang,Zhe Liu,et al. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer[J]. journal of physics d: applied physics,2015,48(4):1. |
| APA | Peng Ren,Ning Zhang,Zhe Liu,Bin Xue,Jinmin Li,&Junxi Wang.(2015).Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer.journal of physics d: applied physics,48(4),1. |
| MLA | Peng Ren,et al."Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer".journal of physics d: applied physics 48.4(2015):1. |
入库方式： OAI收割
来源：半导体研究所
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