中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

文献类型:期刊论文

作者Ahmed Fadil ; Yiyu Ou ; Teng Zhan ; Kaiyu Wu ; Dmitry Suyatin ; Weifang Lu ; Paul Michael Petersen ; Zhiqiang Liu ; Haiyan Ou
刊名journal of nanophotonics
出版日期2015
卷号9期号:1页码:093062
学科主题半导体器件
收录类别SCI
语种英语
公开日期2016-04-15
源URL[http://ir.semi.ac.cn/handle/172111/27025]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Ahmed Fadil,Yiyu Ou,Teng Zhan,et al. Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography[J]. journal of nanophotonics,2015,9(1):093062.
APA Ahmed Fadil.,Yiyu Ou.,Teng Zhan.,Kaiyu Wu.,Dmitry Suyatin.,...&Haiyan Ou.(2015).Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography.journal of nanophotonics,9(1),093062.
MLA Ahmed Fadil,et al."Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography".journal of nanophotonics 9.1(2015):093062.

入库方式: OAI收割

来源:半导体研究所

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