3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector
文献类型：期刊论文
| 作者 | Zhang Wei ; Xu Yingqiang; Zhang Ruikang; Xu Yingqiang
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| 刊名 | 光子学报
 |
| 出版日期 | 2002 |
| 卷号 | 31期号:3页码:303-307 |
| 中文摘要 | A 1.3μm GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy (MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source. A transfer matrix method was used to optimize the device structure. The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers. Devices were isolated by etching 130μm-diameter mesas and filling polyamide into grooves. The maximal quantum efficiency of the device is about 12% at 1.293μm. Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz. Dark current is 2 * 10~(-11) A at zero bias voltage. Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions. |
| 英文摘要 | A 1.3μm GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy (MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source. A transfer matrix method was used to optimize the device structure. The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers. Devices were isolated by etching 130μm-diameter mesas and filling polyamide into grooves. The maximal quantum efficiency of the device is about 12% at 1.293μm. Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz. Dark current is 2 * 10~(-11) A at zero bias voltage. Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:08导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:08:08Z (GMT). No. of bitstreams: 1 5059.pdf: 266568 bytes, checksum: a8dc0408f87c7adb3d8f72ff380cef2c (MD5) Previous issue date: 2002; This work was financially supported by Major State Basic Research Program under Grant No. G2 366 3,the National Natural Science Foundation of China under Grant Nos. 6989626 , 69988 5, 69976 7 and 697898 2; Beijing University of Post & Telecom, P.O. Box 66;Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912;Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912 |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 资助信息 | This work was financially supported by Major State Basic Research Program under Grant No. G2 366 3,the National Natural Science Foundation of China under Grant Nos. 6989626 , 69988 5, 69976 7 and 697898 2 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18025]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Wei,Xu Yingqiang,Zhang Ruikang,et al. 3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector[J]. 光子学报,2002,31(3):303-307. |
| APA | Zhang Wei,Xu Yingqiang,Zhang Ruikang,&Xu Yingqiang.(2002).3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector.光子学报,31(3),303-307. |
| MLA | Zhang Wei,et al."3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector".光子学报 31.3(2002):303-307. |
入库方式： OAI收割
来源：半导体研究所
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