Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP
文献类型：期刊论文
| 作者 | Zhao Youwen ; Luo Yilin ; Feng Hanyuan ; Beling C D ; Lin Lanying |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:10页码:1041-1045 |
| 中文摘要 | properties of fe-doped semi-insulating (si) inp with different iron concentrations are studied by using hall effect, current-voltage (i-v), photoluminescence spectroscopy (pl) and photocurrent spectroscopy (pc) measurements. i-v characteristics of si inp strongly depend on fe doping concentration. fe doping concentration also influences optical properties and defective formation in as-grown si inp. band-gap narrowing phenomenon and defects in fe doped si inp are studied using pi and pc. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18047]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Youwen,Luo Yilin,Feng Hanyuan,et al. Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP[J]. 半导体学报,2002,23(10):1041-1045. |
| APA | Zhao Youwen,Luo Yilin,Feng Hanyuan,Beling C D,&Lin Lanying.(2002).Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP.半导体学报,23(10),1041-1045. |
| MLA | Zhao Youwen,et al."Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP".半导体学报 23.10(2002):1041-1045. |
入库方式： OAI收割
来源：半导体研究所
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