High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide
文献类型：期刊论文
| 作者 | Liu Bin
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:8页码:809-812 |
| 中文摘要 | the 808nm laser diodes with a broad waveguide are designed and fabricated. the thickness of the al_(0.35)-ga_(0.65)as waveguide is increased to 0.9μm. in order to suppress the super modes, the thickness of the al_(0.55)ga_(0.45)as cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). the structures are grown by metal organic chemical vapour deposition. the devices show excellent performances. the maximum output power of 10.2w in the 100μm broad-area laser diodes is obtained. |
| 英文摘要 | the 808nm laser diodes with a broad waveguide are designed and fabricated. the thickness of the al_(0.35)-ga_(0.65)as waveguide is increased to 0.9μm. in order to suppress the super modes, the thickness of the al_(0.55)ga_(0.45)as cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). the structures are grown by metal organic chemical vapour deposition. the devices show excellent performances. the maximum output power of 10.2w in the 100μm broad-area laser diodes is obtained.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:17导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:17z (gmt). no. of bitstreams: 1 5081.pdf: 284149 bytes, checksum: 13887c4f504d143e66b18e07ebf1ed3e (md5) previous issue date: 2002; institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18069]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Bin. High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide[J]. 半导体学报,2002,23(8):809-812. |
| APA | Liu Bin.(2002).High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide.半导体学报,23(8),809-812. |
| MLA | Liu Bin."High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide".半导体学报 23.8(2002):809-812. |
入库方式： OAI收割
来源：半导体研究所
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