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Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System
文献类型：期刊论文
| 作者 | Sun Guosheng ; Wang Lei ; Luo Muchang ; Zhao Wanshun ; Sun Dianzhao ; Zeng Yiping ; Li Jinmin ; Lin Lanying |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:8页码:800-804 |
| 中文摘要 | single crystalline 3c-sic epitaxial layers are grown on φ50mm si wafers by a new resistively heated cvd/lpcvd system, using sih_4, c_2h_4 and h_2 as gas precursors. x-ray diffraction and raman scattering measurements are used to investigate the crystallinity of the grown films. electrical properties of the epitaxial 3c-sic layers with thickness of 1 ～ 3μm are measured by van der pauw method. the improved hall mobility reaches the highest value of 470cm~2/(v·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3). |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家基础研究专项基金（no. g2 683）,国家高技术研究与发展基金（no. 2 1aa311 9 ） |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18073]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Guosheng,Wang Lei,Luo Muchang,et al. Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System[J]. 半导体学报,2002,23(8):800-804. |
| APA | Sun Guosheng.,Wang Lei.,Luo Muchang.,Zhao Wanshun.,Sun Dianzhao.,...&Lin Lanying.(2002).Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System.半导体学报,23(8),800-804. |
| MLA | Sun Guosheng,et al."Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System".半导体学报 23.8(2002):800-804. |
入库方式： OAI收割
来源：半导体研究所
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