Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
文献类型：期刊论文
| 作者 | Shen Xiaoming ; Feng Zhihong ; Feng Gan ; Fu Yi ; Zhang Baoshun ; Sun Yuanping ; Zhang Zehong ; Yang Hui |
| 刊名 | 半导体学报
 |
| 出版日期 | 2002 |
| 卷号 | 23期号:7页码:707-712 |
| 中文摘要 | wet etching characteristics of cubic gan (c-gan) thin films grown on gaas(001) by metalorganic vapor phase epitaxy (movpe) are investigated. the samples are etched in hcl, h_3po_4, koh aqueous solutions, and molten koh at temperatures in the range of 90～300 ℃. it is found that different solution produces different etch figure on the surfaces of a sample. koh-based solutions produce rectangular pits rather than square pits. the etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. an explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. in addition, it is found that koh aqueous solution would be more suitable than molten koh and the two acids for the evaluation of stacking faults in c-gan epilayers. |
| 英文摘要 | wet etching characteristics of cubic gan (c-gan) thin films grown on gaas(001) by metalorganic vapor phase epitaxy (movpe) are investigated. the samples are etched in hcl, h_3po_4, koh aqueous solutions, and molten koh at temperatures in the range of 90～300 ℃. it is found that different solution produces different etch figure on the surfaces of a sample. koh-based solutions produce rectangular pits rather than square pits. the etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. an explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. in addition, it is found that koh aqueous solution would be more suitable than molten koh and the two acids for the evaluation of stacking faults in c-gan epilayers.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:18导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:18z (gmt). no. of bitstreams: 1 5084.pdf: 359496 bytes, checksum: 0a86b6cb9cdea93752e9f5068902638f (md5) previous issue date: 2002; 国家自然科学基金（批准号：698251 7）,nsfc-rgc联合基金（批准号：5 1161953，n-hku 28/ ）; institute of semiconductors, the chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金（批准号：698251 7）,nsfc-rgc联合基金（批准号：5 1161953，n-hku 28/ ） |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/18075]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shen Xiaoming,Feng Zhihong,Feng Gan,et al. Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE[J]. 半导体学报,2002,23(7):707-712. |
| APA | Shen Xiaoming.,Feng Zhihong.,Feng Gan.,Fu Yi.,Zhang Baoshun.,...&Yang Hui.(2002).Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE.半导体学报,23(7),707-712. |
| MLA | Shen Xiaoming,et al."Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE".半导体学报 23.7(2002):707-712. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。